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| UNISONIC TECHNOLOGIES CO., LTD 22N60 HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC's advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET 1 TO-247 FEATURES * RDS(ON) = 240 m * Ultra Low Gate Charge ( Typical 150 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 22N60L-T47-T 22N60G-T47-T Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-216.E 22N60 ABSOLUTE MAXIMUM RATINGS (TC =25C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V Avalanche Current IAR 22 A Continuous Drain Current ID 22 A Pulsed Drain Current (Note 1) IDM 88 A Single Pulsed EAS 380 mJ Avalanche Energy 37 mJ Repetitive EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 18 V/ns Power Dissipation PD 370 W Junction Temperature TJ 150 C Operating Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS 40 0.34 UNIT C /W C /W ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge SYMBOL BVDSS IDSS IGSS BVDSS/TJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS=0V, ID=250A VDS=600V, VGS=0V VDS=0V, VGS=30V ID=1mA, Referenced to 25C VDS=VGS, ID=250A VGS=10V, ID=13A (Note 4) MIN 600 50 100 0.30 2.0 240 3570 350 36 26 99 48 37 150 45 76 4.0 280 TYP MAX UNIT V A nA V/C V m pF pF pF ns ns ns ns nC nC nC VDS=25V, VGS=0V, f=1.0MHz VDD=300V, ID=22A, RG=6.2 VGS=10V (Note 4) VDS=480V, VGS=10V, ID=22A (Note 4) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-216.E 22N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=22A Continuous Source Current IS (Body Diode) (Note 1) Pulsed Source Current (Body Diode) ISM Reverse Recovery Time tRR IS=22A, di/dt=100A/s(Note 4) Reverse Recovery Charge QRR Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. TJ = 25C, L = 1.5mH, RG=25, IAS = 22A 3. ISD 22A, di/dt 540 A/s, VDD V(BR)DSS, TJ 150C. 4. Pulse Width 300 s, Duty Cycle 2%. MIN Power MOSFET TYP MAX UNIT 1.5 22 V A A ns C 590 7.2 88 890 11 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-216.E 22N60 TEST CIRCUITS Power MOSFET Switching Test Circuit Switching Waveforms Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-216.E 22N60 TEST CIRCUITS(Cont.) Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-216.E 22N60 TYPICAL CHARACTERISTICS Source Current vs. Source to Drain Voltage 12 10 8 6 4 2 0 Power MOSFET 12 10 8 6 4 2 0 0 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain Current, IS (A) VGS=10V, ID=10A 0.2 0.4 0.6 0.8 Source to Drain Voltage, VSD (V) 1.0 0 1 2 3 Drain to Source Voltage, VDS (V) 4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-216.E |
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